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| HAT3021R Silicon N/P Channel Power MOS FET Power Switching REJ03G0415-0200 Rev.2.00 Oct.06.2004 Features * Capable of 4.5 V gate drive * Low drive current * High density mounting Outline SOP-8 78 DD 56 DD 5 76 2 G 4 G 8 3 12 S1 S3 4 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Nch Pch Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 Tch Ratings Nch 80 20 3.4 20.4 3.4 1.5 150 Pch -80 20 -2.6 -15.6 -2.6 1.5 Unit V V A A A W C C Storage temperature Tstg -55 to +150 Notes: 1. PW 10 s, duty cycle 1 % 2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s Rev.2.00, Oct.06.2004, page 1 of 10 HAT3021R Electrical Characteristics (Ta = 25C) * N Channel Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 80 20 -- -- 1.0 -- -- 4.2 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 90 100 7.0 400 57 24 7.3 1.1 1.3 6.0 4.0 39 3.5 0.83 30 Max -- -- 10 1 2.5 115 145 -- -- -- -- -- -- -- -- -- -- -- 1.08 -- Unit V V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 80 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 1.7 A, VGS = 10 V Note4 ID = 1.7 A, VGS = 4.5 V Note4 ID = 1.7 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 25 V VGS = 10 V ID = 3.4 A VGS = 10 V, ID = 1.7 A VDD 30 V RL = 17.6 Rg = 4.7 IF = 3.4 A, VGS = 0 Note4 IF = 3.4 A, VGS = 0 diF/ dt = 100 A/ s Rev.2.00, Oct.06.2004, page 2 of 10 HAT3021R * P Channel Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min -80 20 -- -- -1.0 -- -- 2.0 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 165 200 3.3 930 90 56 16 2.1 2.4 20 12 40 5.5 -0.83 30 Max -- -- 10 -1 -2.5 210 290 -- -- -- -- -- -- -- -- -- -- -- -1.08 -- Unit V V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -80 V, VGS = 0 VDS = -10 V, I D = -1 mA ID = -1.3 A, VGS = -10 V Note4 ID = -1.3 A, VGS = - 4.5 V Note4 ID = -1.3 A, VDS = -10 V Note4 VDS = -10 V VGS = 0 f = 1MHz VDD = -25 V VGS = -10 V ID = -2.6 A VGS = -10 V, ID = -1.3 A VDD -30 V RL = 23.0 Rg = 4.7 IF = -2.6 A, VGS = 0 Note4 IF = -2.6 A, VGS = 0 diF/ dt =100A/s Rev.2.00, Oct.06.2004, page 3 of 10 HAT3021R Main Characteristics * N Channel Power vs. Temperature Derating 4.0 Pch (W) 100 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s Maximum Safe Operation Area 3.0 ID (A) 10 PW Channel Dissipation Drain Current 1 DC =1 10 10 s 0 1m s s 0m s( 1s 2.0 Op era tio 0.1 Operation in this area is limited by RDS(on) n( ho PW t) 1 No t 0 se 4 ) 1.0 0.01 Ta = 25C 0 50 100 150 Ta (C) 200 0.001 1 shot Pulse 0.1 1 10 100 Ambient Temperature Drain to Source Voltage VDS (V) Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Output Characteristics 10 4.5 V 10 V 3.4 V 10 Typical Transfer Characteristics VDS = 10 V Pulse Test ID (A) Drain Current ID (A) 3.2 V Drain Current 5 3.0 V 5 VGS = 2.8 V Pulse Test 0 5 Drain to Source Voltage VDS 10 (V) 0 Tc = 75C 25C -25C 2 3 4 Gate to Source Voltage VGS 5 (V) Drain to Source Voltage VDS(on) (mV) 500 Pulse Test 400 300 200 Static Drain to Source on State Resistance RDS(on) (m) Drain to Source Saturation Voltage vs Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 1000 100 VGS = 4.5 V 10 V ID = 2 A 1A 0.5 A 15 5 10 20 Gate to Source Voltage VGS (V) 100 0 10 0.1 Pulse Test 1 Drain Current 10 ID (A) 100 Rev.2.00, Oct.06.2004, page 4 of 10 HAT3021R Static Drain to Source on State Resistance vs. Temperature 250 Pulse Test 200 ID = 0.5 A, 1 A, 2 A Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance RDS(on) (m) Forward Transfer Admittance |yfs| (S) 100 30 10 3 1 0.3 0.1 Tc = -25C 150 VGS = 4.5 V 100 0.5 A, 1 A, 2 A 25C 75C 50 0 -25 10 V 0.03 0.01 0.01 0.03 0.1 0.3 VDS = 10 V Pulse Test 1 3 10 Drain Current ID (A) 0 25 50 75 100 125 150 Case Temperature Tc (C) Reverse Recovery Time trr (ns) 100 Body-Drain Diode Reverse Recovery Time 1000 500 Typical Capacitance vs. Drain to Source Voltage Ciss 50 Capacitance C (pF) 200 100 50 20 10 5 2 Coss Crss 20 di / dt = 100 A / s VGS = 0, Ta = 25C 1 3 Reverse Drain Current 10 IDR (A) 10 VGS = 0 f = 1 MHz 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Switching Characteristics 20 (V) 100 50 Switching Time t (ns) tf td(on) tr td(off) Dynamic Input Characteristics VDS (V) 100 ID = 3.4 A VGS VDS VDD = 50 V 25 V 10 V Drain to Source Voltage VGS 80 16 60 12 Gate to Source Voltage 20 10 5 40 8 20 VDD = 50 V 25 V 10 V 2 4 6 8 Gate Charge Qg (nC) 4 0 10 0 2 VGS = 10 V, VDD = 30 V Rg = 4.7 , duty 1 % 1 0.1 0.2 1 2 0.5 5 Drain Current ID (A) 10 Rev.2.00, Oct.06.2004, page 5 of 10 HAT3021R Reverse Drain Current vs. Source to Drain Voltage 10 Reverse Drain Current IDR (A) 10 V 5 5V VGS = 0 V, -5 V Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 10 1 D=1 0.5 0.2 0.1 0.05 0.1 0.02 0.01 1 0.0 se pul hot 1s ch - f(t) = s (t) x ch - f ch - f = 125C/W, Ta = 25C When using the glass epoxy board (FR4 40x40x1.6 mm) PDM D= PW T 0.001 PW T 0.0001 10 100 1m 10 m 100 m 1 10 Pulse Width PW (S) 100 1000 10000 Switching Time Test Circuit Vin Monitor Rg D.U.T. RL Vin Vin 10 V V DS = 30 V Vout Monitor Switching Time Waveform 90% 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Rev.2.00, Oct.06.2004, page 6 of 10 HAT3021R * P Channel Power vs. Temperature Derating 4.0 Pch (W) Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0 100 Maximum Safe Operation Area 10 s ID (A) 10 PW Channel Dissipation Drain Current 1 DC =1 10 0 1 m s s 2.0 Op 0m era s( 1s 0.1 Operation in this area is 0.01 limited by RDS(on) Ta = 25C tio ho n( t) PW 1.0 1Note 0s 4 ) 0 50 100 150 Ta (C) 200 0.001 1 shot Pulse 0.1 1 10 100 Ambient Temperature Drain to Source Voltage VDS (V) Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Output Characteristics -5.0 -10 V -4.5 V ID (A) -3.0 V -4 ID (A) -5 Typical Transfer Characteristics VDS = 10 V Pulse Test -3 Drain Current -2.5 VGS = -2.8 V Drain Current -2 Tc = 75C 25C -25C 0 -2 -4 -6 Gate to Source Voltage -8 VGS -10 (V) -1 Pulse Test 0 -5 Drain to Source Voltage VDS -10 (V) Drain to Source Voltage VDS(on) (mV) -1000 Pulse Test -800 Static Drain to Source on State Resistance RDS(on) (m) Drain to Source Saturation Voltage vs Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 1000 Pulse Test VGS = -4.5 V 100 -10 V -600 -400 -200 ID = -2 A -1 A -0.5 A 0 -4 -8 -12 Gate to Source Voltage -16 -20 VGS (V) 10 -0.1 -1 Drain Current -10 ID (A) Rev.2.00, Oct.06.2004, page 7 of 10 HAT3021R Static Drain to Source on State Resistance vs. Temperature 500 Pulse Test 400 ID = -0.5 A, -1 A 300 VGS = 4.5 V 200 -0.5 A, -1 A, -2 A 10 V -2 A Forward Transfer Admittance vs. Drain Current Tc = -25C Static Drain to Source on State Resistance RDS(on) (m) Forward Transfer Admittance |yfs| (S) 10 5 2 1 0.5 25C 0.2 0.1 0.05 0.02 0.01 0 -0.03 -0.1 -0.3 Drain Current VDS = 10 V Pulse Test -1 -3 -10 ID (A) 75C 100 0 -25 0 25 50 75 100 125 150 Case Temperature Tc (C) Body-Drain Diode Reverse Recovery Time Reverse Recovery Time trr (ns) 100 10000 5000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss 50 Capacitance C (pF) 2000 1000 500 200 100 50 20 10 20 di / dt = -100 A / s VGS = 0, Ta = 25C -0.3 -1 -3 -10 Reverse Drain Current IDR (A) Dynamic Input Characteristics Coss Crss 0 -10 -20 -30 -40 -50 10 -0.1 Drain to Source Voltage VDS (V) Switching Characteristics 100 (V) 50 Switching Time t (ns) td(off) tr td(on) tf VDS (V) 0 VDD = -50 V -25 V -10 V 0 Drain to Source Voltage VGS -20 -4 -40 VDS -60 VDD = -50 V -25 V -10 V VGS -8 Gate to Source Voltage 20 10 5 2 1 -0.1 -12 -80 ID = -2.6 A -100 0 4 8 12 16 Gate Charge Qg (nC) -16 VGS = -10 V, VDS = -30 V Rg = 4.7 , duty 1 % -1 Drain Current -10 ID (A) -20 20 Rev.2.00, Oct.06.2004, page 8 of 10 HAT3021R Reverse Drain Current vs. Source to Drain Voltage -5.0 Reverse Drain Current IDR (A) -10 V -5 V -2.5 VGS = 0V, 5 V Pulse Test 0 -0.4 -0.8 -1.2 -1.6 -2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 10 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 ch - f(t) = s (t) x ch - f ch - f = 125C/W, Ta = 25C When using the glass epoxy board (FR4 40x40x1.6 mm) uls e PDM PW T 0.01 1s h p ot D= PW T 0.001 10 100 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Switching Time Test Circuit Vin Monitor Rg D.U.T. RL Vout Monitor Vin Switching Time Waveform 10% 90% Vin -10 V V DD = -30 V Vout td(on) 90% 10% tr td(off) 90% 10% tf Rev.2.00, Oct.06.2004, page 9 of 10 HAT3021R Package Dimensions As of January, 2003 Unit: mm 4.90 5.3 Max 5 8 1 4 3.95 *0.22 0.03 0.20 0.03 1.75 Max 0.75 Max 6.10 - 0.30 + 0.10 1.08 0 - 8 0.14 - 0.04 + 0.11 1.27 + 0.67 0.60 - 0.20 *0.42 0.08 0.40 0.06 0.15 0.25 M *Dimension including the plating thickness Base material dimension Package Code JEDEC JEITA Mass (reference value) FP-8DA Conforms -- 0.085 g Ordering Information Part Name HAT3021R-EL-E Quantity 2500 pcs Taping Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00, Oct.06.2004, page 10 of 10 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. 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